Skripsi

ANALISIS SIFAT MEKANIK DAN FISIKA MEMBRAN NANOFIBER PVDF/PAN/GRAPHENE MENGGUNAKAN RESPONSE SURFACE METHODOLOGY UNTUK APLIKASI IMPLAN JANTUNG SEBAGAI KONTRIBUSI PADA MATA KULIAH FISIKA DASA

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Penilaian

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Heart disease is the leading cause of death in the world. It's because the heart muscle is damaged so the heart's function is disrupted. One of the methods used to deal with heart failure is the installation of mechanical implants based on Nanofiber Technology. The composite material of PVDF/PAN combined with the conductive graphene uses the electrospinning method to regenerate heart tissue successfully. In order to maximize composite, RSM is used to predict the optimal diameter and young module on PVDF/PAN/Graphene nanofiber membranes. The resulting RSM ranges from 541-864 nm in diameter to 48,45-85 nm in young modules. As for the characterization results, the diameter of the membrane ranges between 676 nm, 657 nm, 705 nm, and 559 nm. Then FTIR shows the presence of a function cluster indicating PVDF/PAN/Graphene. The XRD results a series of difractional peaks of 2θ: 17.28°, 17.64°, 20.42°, 22.84°, 26.32°, and 29.04°. Young modules range between 0.16-3,5 MPa. While for hydrophobic contact angles are 133.6°, 138.1°, 135.6° and 136.7°. Based on testing and data analysis, PVDF/PAN/Graphene nanofiber membranes have great potential for cardiac tissue regeneration applications. Keywords: Graphene, diameter, young modules, nanofiber, RSM

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Availability

Inventory Code	Barcode	Call Number	Location	Status
2407002278	T142806	T1428062024	Central Library (References)	Available but not for loan - Not for Loan

Detail Information

Series Title

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Call Number

T1428062024

Publisher

Indralaya : Prodi Pendidikan Fisika, Fakultas Keguruan dan Ilmu Pendidikan Universitas Sriwijaya., 2024

Collation

xvii, 90 hlm.; ilus.; 29 cm

Language

Indonesia

ISBN/ISSN

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Classification

538.07

Content Type

Text

Media Type

unmediated

Carrier Type

-

Edition

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Subject(s)

Prodi Pendidikan Fisika

Specific Detail Info

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Statement of Responsibility

KA

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