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STUDI POTENSI BENCANA TANAH LONGSOR PADA DAS OGAN DI KABUPATEN OGAN ILIR BERDASARKAN ANALISIS GEOLISTRIK RESISTIVITAS 2D KONFIGURASI WENNER-SCHLUMBERGER DAN ANALISIS CURAH HUJAN

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Penilaian

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Serijabo Village, located in Ogan Ilir Regency, features a flat geographical landscape and is traversed by the Ogan River. Increased human activities and the presence of numerous structures built along the riverbanks have made the area vulnerable to landslides. This study aims to identify the subsurface lithology within the river basin area (DAS) and analyze the impact of rainfall on landslide potential. The method employed is the 2D electrical resistivity method using the Wenner-Schlumberger configuration. Measurements were conducted along three survey lines, each 23 meters in length with an electrode spacing of 1 meter. Additionally, rainfall data from January 2015 to February 2025 were analyzed to assess the relationship between rainfall intensity and landslide occurrence. Interpretation of geoelectrical data based on resistivity values revealed three types of subsurface layers: saturated clay (2.81 – 12.3 Ωm, depth 1.27 – 4.80 m), shale clay (15.5 – 114 Ωm, depth 0.25 – 1.27 m), and compact clay (154.4 – 298 Ωm, depth 1.27 – 4.80 m). Landslides in the study area are primarily triggered by subsurface water flow induced by rainfall, most likely occurring during the period from November to April. During this time frame, the average daily rainfall ranges between 10.09 mm/day and 11.62 mm/day.

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Availability

Inventory Code	Barcode	Call Number	Location	Status
2507003181	T173821	T1738212025	Central Library (Reference)	Available but not for loan - Not for Loan

Detail Information

Series Title

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Call Number

T1738212025

Publisher

: Prodi Ilmu Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam Universitas Sriwijaya., 2025

Collation

xiv, 97 hlm.; ill.; tab.; 29 cm.

Language

Indonesia

ISBN/ISSN

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Classification

530.07

Content Type

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Media Type

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Carrier Type

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Edition

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Subject(s)

Fisika

Specific Detail Info

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Statement of Responsibility

EM

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