Skripsi

EKSTRAKSI CAHAYA DALAM SILIKON UNTUK PENGEMBANGAN SUMBER OPTIK YANG EFISIEN

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Penilaian

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This research aims to optimize and characterize a new ion implantation technique to obtain emission from silicon that is fully compatible with mature CMOS technology. Silicon has the disadvantage of having an indirect band gap, which reduces the efficiency of light extraction from silicon. Therefore, carbon ion implantation on silicon in this study becomes the method used to enhance light extraction efficiency in silicon, and annealing is performed to repair the damage to the silicon material after ion implantation. To understand the characteristics of silicon before ion implantation, after carbon ion implantation, and after annealing, photoluminescence technique was used. After performing photoluminescence, it can be concluded that the higher the laser power used, the greater the intensity obtained during photoluminescence. The highest intensity is found in the silicon sample with single implantation with a value of 0.394 V at a power of 900 mWcm-2 at a temperature of 10 K. Meanwhile, the intensity value in silicon that has undergone annealing is slightly smaller than before annealing, with a value of 0.384 V before annealing and 0.365 V after annealing. In each spectrum, there is a peak at around 1.08 eV to 1.09 eV, which is very close to the silicon band gap energy of 1.1 eV.

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Availability

Inventory Code	Barcode	Call Number	Location	Status
2307003056	T126839	T1268392023	Central Library (Referens)	Available but not for loan - Not for Loan

Detail Information

Series Title

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Call Number

T1268392023

Publisher

Inderalaya : Jurusan Fisika, Fakultas Matematika Dan Ilmu Pengetahuan Alam., 2023

Collation

xiii, 37 hlm.; ilus.; 29 cm

Language

Indonesia

ISBN/ISSN

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Classification

353.07

Content Type

Text

Media Type

unmediated

Carrier Type

-

Edition

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Subject(s)

Jurusan Fisika
cahaya optik

Specific Detail Info

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Statement of Responsibility

SEPTA

Other version/related

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