Electronic Resource

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

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Penilaian

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This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

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Availability

Inventory Code	Barcode	Call Number	Location	Status
1408000615	EB0003035	621.044 Sam f	Central Library (OPAC)	Available

Detail Information

Series Title

SpringerBriefs in Applied Sciences and Technology

Call Number

621.044 Sam f

Publisher

Tokyo : Springer Tokyo., 2014

Collation

viii, 40.: Ill.

Language

English

ISBN/ISSN

978-4-431-54795-2

Classification

621.044

Content Type

Ebook

Media Type

-

Carrier Type

online resource

Edition

1

Subject(s)

Plasma engineering
Plasma etching

Specific Detail Info

-

Statement of Responsibility

RTS

Other version/related

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