Electronic Resource

Highly Integrated Gate Drivers for Si and GaN Power Transistors

---

Penilaian

---

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​

---

Availability

Inventory Code	Barcode	Call Number	Location	Status
1908000872	EB0001462	621.381 528 Sei h	Central Library (OPAC)	Available

Detail Information

Series Title

-

Call Number

621.381 528 Sei h

Publisher

Switzerland : Springer Cham., 2021

Collation

xvii, 124p.:Ill

Language

English

ISBN/ISSN

978-3-030-68940-7

Classification

621.381 528

Content Type

Ebook

Media Type

-

Carrier Type

online resource

Edition

1

Subject(s)

Power transistors

Specific Detail Info

-

Statement of Responsibility

BRF

Other version/related

File Attachment

Comments

---

You must be logged in to post a comment